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| TIL113 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l 2.54 6.4 6.2 1.54 8.8 8.4 1 2 3 Dimensions in mm UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 pending 6 5 4 4.3 4.1 0.5 0.3 7.8 7.4 DESCRIPTION The TIL113 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. 0.5 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 30V 7V 150mW 80mA 5V 105mW FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l OPTION SM SURFACE MOUNT OPTION G 5.08 max. 1.2 0.6 1.4 0.9 0.26 10.16 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) 10.2 9.5 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 19/4/99 DB91047-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) MIN TYP MAX UNITS 1.2 3 10 30 30 7 100 1.5 V V A V V V nA mA TEST CONDITION IF = 10mA IR = 10A VR = 3V IC = 1mA (note 2) IC = 100A IE = 100A VCE = 10V 10mA IF , 1V VCE Output Coupled Collector Output Current ( IC ) (Note 2) 30 Collector-emitter Saturation VoltageVCE(SAT) 1.2 V 50mA IF , 50mA IC Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK s s (note 1) (note 1) Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time tr tf 60 53 300 250 VIO = 500V (note 1) VCC= 15V, IC = 10mA, RL = 100 , fig.1 Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 15V Input 100 IC = 10mA tr Input Output Output 10% 90% 10% 90% ton toff tf 19/4/99 DB91047-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) Current transfer ratio CTR (%) 10000 5000 1000 800 500 100 50 10 Current Transfer Ratio vs. Forward Current 150 100 50 VCE = 1V TA = 25C 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 100 0 0.1 0.2 0.5 1 2 5 10 20 50 100 Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 100 50mA 20 Collector current I C (mA) 80 60 40 2mA 20 0 -30 0 25 50 75 100 125 0 1 2 3 4 5 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio IF = 1mA 10mA 5mA TA = 25C 80 Forward current I F (mA) CE(SAT) 60 40 20 0 (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 Collector-emitter saturation voltage V IF = 10mA VCE = 1V IF = 50mA IC = 50mA 1.0 0.5 0 0 25 50 75 100 -30 Ambient temperature TA ( C ) 0 25 50 75 Ambient temperature TA ( C ) 100 19/4/99 DB91047-AAS/A1 |
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